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Size-Dependent Resistivity in Nanoscale Interconnects

机译:纳米级互连中尺寸相关的电阻率

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As the dimensions of conductors shrink into the nanoscak, their electrical conductivity becomes dependent on their size even at, room temperature. Although the behavior varies dramatically as temperatures increase from nanokelvins to hundreds of kelvins, the erfect is generally to increase the resistivity above that of bulk material. As such, the underlying size-dependent phenomena have become increasingly important as advanced technologies have shifted their focus first from macro- to microscale and more recently from micro- to nanoscaie dimensions. Indeed, the size-dependent increase of electrical resistivity that results from electron scattering on external and internal surfaces of copper conductors has already become technology limiting in modern microelectronics. This article summarizes the phenomena that underlie size effects, focusing on conduction in copper lines in particular. Attention is given to describing key innovations in both theoretical and experimental assessments that have significantly modified, facilitated, or advanced understanding.
机译:当导体的尺寸缩小到纳米级时,即使在室温下,其电导率也取决于其尺寸。尽管随着温度从纳米开尔文增加到数百开尔文,行为发生了巨大变化,但通常的效果是将电阻率提高到高于散装材料的电阻率。这样,随着先进技术首先将重点从宏观转移到微米,最近又从微观转移到纳米尺度,潜在的与尺寸有关的现象变得越来越重要。实际上,由于电子在铜导体的内外表面上的散射而导致的电阻率的大小依赖性增加已经成为现代微电子技术中的技术限制。本文总结了尺寸效应的基础现象,特别是铜线的导电性。注意在理论和实验评估中都描述了已显着修改,促进或高级理解的关键创新。

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