Assessment of Future Nanoscale Interconnects: Resistivity of Copper and Aluminum Lines

摘要

In this paper a first comparative assessment of the electrical characteristics of Cu and Al(0.5% Cu) interconnects with line widths below 100 nm is given. A method for extraction of electrical resistivity based on Matthiessen's rule will be discussed, providing an easier characterization of the samples than common approaches with line geometry determination by SEM or TEM. While the data on Cu lines fit very well to the established model of the size effect, AlCu lines show an additional effect due to interruptions in the AlCu main conductor,