机译:三甲基硼嗪前驱体通过PECVD生长的BC x N> y sub>膜的形态
Department of Materials Science Technische Universität Darmstadt Petersenstr. 23 64287 Darmstadt Germany;
Department of Materials Science Technische Universität Darmstadt Petersenstr. 23 64287 Darmstadt Germany;
Department of Materials Science Technische Universität Darmstadt Petersenstr. 23 64287 Darmstadt Germany;
Physikalisch-Technische Bundesanstalt Abbestr. 2-12 10587 Berlin Germany;
Physikalisch-Technische Bundesanstalt Abbestr. 2-12 10587 Berlin Germany;
Russian Academy of Sciences Nikolaev Institute of Inorganic Chemistry Siberian Branch Acad. Lavrentyev Pr. 3 Novosibirsk 630090 Russia;
Russian Academy of Sciences Nikolaev Institute of Inorganic Chemistry Siberian Branch Acad. Lavrentyev Pr. 3 Novosibirsk 630090 Russia;
Russian Academy of Sciences Nikolaev Institute of Inorganic Chemistry Siberian Branch Acad. Lavrentyev Pr. 3 Novosibirsk 630090 Russia;
Russian Academy of Sciences Nikolaev Institute of Inorganic Chemistry Siberian Branch Acad. Lavrentyev Pr. 3 Novosibirsk 630090 Russia;
Department of Materials Science Technische Universität Darmstadt Petersenstr. 23 64287 Darmstadt Germany;
Boron carbonitride; Synthesis; PECVD; XPS; NEXAFS;
机译:PECVD与三甲基硼嗪前体一起生长的BC _x N _y膜的形态
机译:PECVD与三甲基硼嗪前体一起生长的BC _x N _y膜的形态
机译:N-三甲基硼嗪-氮混合物中通过等离子体增强化学气相沉积法生长的薄膜BC_xN_y的性质
机译:N-三甲基硼嗪与氢和氨混合的PECVD BC_xN_y膜:建模,合成和表征
机译:研究热生长和远端PECVD沉积的二氧化硅薄膜中的局部原子结构和热历史。
机译:使用超薄Pt催化剂通过PECVD在GaN LED外延片上生长类似于石墨烯的无转移薄膜用于透明电极应用
机译:用HMDS前体与远程PECVD系统用C2H2稀释气体使用HMDS前体沉积SiC:H膜的表征