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A multisampling time-domain CMOS imager with synchronous readout circuit

机译:具有同步读出电路的多采样时域CMOS成像器

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A novel multisampling time-domain architecture for CMOS imagers with synchronous readout and wide dynamic range is proposed. The proposed multisampling architecture requires only a single bit per pixel memory instead of 8 bits which is typical for time-domain active pixel architectures. The goal is to obtain a time-domain imager with high dynamic range that requires lower number of transistors per pixel in order to achieve higher fill-factor. The maximum frame rate is analyzed as a function of number of bits and array size. The analysis shows that it is possible to achieve high frame rates and operate in video mode having 10 bit pixel data resolution. Also, we present analysis of the impact of comparator offset voltage on the fixed pattern noise. The architecture was implemented in an imager prototype with 32 × 32 pixel array fabricated in AMS CMOS 0.35 μm and was characterized for sensitivity, noise and color response. The pixel size is 30 μm × 26 μm and it is composed of an n+/psub photodiode, a comparator and a D flip-flop with a 16% fill-factor.
机译:提出了一种具有同步读出和宽动态范围的CMOS成像器新型多采样时域架构。所提出的多重采样架构每个像素存储器仅需要一个比特,而不是时域有源像素架构通常需要的8个比特。目的是获得具有高动态范围的时域成像器,该成像器需要每个像素较少的晶体管数量才能实现较高的填充系数。将最大帧速率作为位数和数组大小的函数进行分析。分析表明,可以实现高帧速率并在具有10位像素数据分辨率的视频模式下运行。此外,我们介绍了比较器失调电压对固定模式噪声的影响的分析。该架构在具有32×32像素阵列且在AMS CMOS 0.35μm中制造的成像器原型中实现,并针对灵敏度,噪声和色彩响应进行了表征。像素大小为30μm×26μm,由一个n + / psub光电二极管,一个比较器和一个填充率为16%的D触发器组成。

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