Optimal superior-order curvature-corrected voltage reference based on the weight difference of gate-source voltages

摘要

A new curvature-correction technique for improving the temperature behavior of a CMOS voltage reference will be presented. The reducing of the temperature coefficient for the reference voltage will be realized compensating the nonlinear temperature dependence of the gate-source voltage for a MOS transistor working in weak inversion with the difference between two gate-source voltages. These MOS transistors are biased at drain currents with different temperature dependencies (PTAT and PTAT α, respectively), α parameter being selected to the optimal value for the implementing technology. The PTAT voltage generator will be designed using an original Offset Voltage Follower block, with the advantage of a reduced silicon occupied area as a result of replacing classical resistors by MOS active devices. SPICE simulation reports TC = 1.95 ppm/K for an extended temperature range, 273 K < T < 363 K, without considering the parameters spread. The circuit is compatible with low-power low-voltage designed, having a maximal power consumption of 0.4 μW for a minimal supply voltage of 1.1 V.