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Transformer-coupled cascode stage for mm-wave power amplifiers in sub-μm CMOS technology

机译:亚微米CMOS技术中用于毫米波功率放大器的变压器耦合共源共栅级

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摘要

An amplifier topology based on a transformer-coupled cascode stage is presented and compared with the most used solutions for sub-μm CMOS power amplifiers, which are the common-source stage, cascode stage, and capacitive-coupled cascode stage. The comparison was carried out by designing each amplifier in a 65-nm CMOS technology and for a 60-GHz operating frequency. The design was optimized for a trade off among power gain, saturated output power, and linearity. Operating from a 1.2-V supply voltage, the proposed amplifier improves both small-signal and large-signal performance with respect to the most common approaches, thus demonstrating effectiveness with sub-μm CMOS technologies and mm-wave operation.
机译:提出了一种基于变压器耦合共源共栅级的放大器拓扑,并将其与亚微米CMOS功率放大器最常用的解决方案进行了比较,这些解决方案是共源级,共源共栅级和电容耦合共源共栅级。通过将每个放大器设计为采用65 nm CMOS技术并针对60 GHz的工作频率进行比较。该设计经过了优化,可以在功率增益,饱和输出功率和线性度之间进行权衡。拟议的放大器采用1.2V电源电压工作,相对于最常见的方法,它同时改善了小信号和大信号性能,从而证明了亚微米CMOS技术和毫米波工作的有效性。

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