0.5 V CMOS inverter-based tunable transconductor

摘要

A new technique for CMOS inverter-based tunable transconductors is proposed in this paper. The proposed technique employs the master–slave approach and offers large transconductance tuning range using a control current. The transconductor was designed using triple-well 0.13 μm CMOS process under the ultra low supply voltage of 0.5 V. The circuit features 37 dB open loop gain, CMRR = 31 dB at each output node, PSRR = 90 dB and GBW = 530 MHz for 120 μA current consumption.