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A novel low-power, low-offset, and high-speed CMOS dynamic latched comparator

机译:一种新颖的低功耗,低失调和高速CMOS动态锁存比较器

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A novel dynamic latched comparator with offset voltage compensation is presented. The proposed comparator uses one phase clock signal for its operation and can drive a larger capacitive load with complementary version of the regenerative output latch stage. As it provides a larger voltage gain up to 22 V/V to the regenerative latch, the input-referred offset voltage of the latch is reduced and metastability is improved. The proposed comparator is designed using 90 nm PTM technology and 1 V power supply voltage. It demonstrates up to 24.6% less offset voltage and 30.0% less sensitivity of delay to decreasing input voltage difference (17 ps/decade) than the conventional double-tail latched comparator at approximately the same area and power consumption. In addition, with a digitally controlled capacitive offset calibration technique, the offset voltage of the proposed comparator is further reduced from 6.03 to 1.10 mV at 1-sigma at the operating clock frequency of 3 GHz, and it consumes 54 μW/GHz after calibration.
机译:提出了一种具有失调电压补偿的新型动态锁存比较器。拟议的比较器使用一个相位时钟信号进行操作,并且可以利用再生输出锁存器级的互补版本来驱动更大的容性负载。由于它为再生锁存器提供了高达22 V / V的更大电压增益,因此锁存器的输入参考失调电压得以降低,亚稳性得到改善。拟议的比较器采用90 nm PTM技术和1 V电源电压设计。在大约相同的面积和功耗下,与传统的双尾锁存比较器相比,它对减小输入电压差(17 ps /十倍)的偏移电压降低了多达24.6%,延迟敏感性降低了30.0%。此外,采用数控电容偏移校准技术,在3 GHz的工作时钟频率下,建议的比较器的偏移电压在1 sigma时从6.03进一步降低至1.10 mV,并且在校准后消耗54μW/ GHz。

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