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首页> 外文期刊>American journal of applied sciences >A NOVEL INTERCONNECT STRUCTURE FOR ELMORE DELAY MODEL WITH RESISTANCE- CAPACITANCE-CONDUCTANCE SCHEME
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A NOVEL INTERCONNECT STRUCTURE FOR ELMORE DELAY MODEL WITH RESISTANCE- CAPACITANCE-CONDUCTANCE SCHEME

机译:具有电阻-电容-电导方案的更高级延迟模型的新型互连结构

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In this brief, we present a simple close-form delay estimate, based on first and second order moments that handle arbitrary voltages and conductance effects for a lumped and distributed line. This proposed model introduces a simple tractable delay formula by incorporating conductance (G) into Resistance, Capacitance (RC) network by preserving the characteristics of the Elmore delay model. The RCG model attains quick steady state condition and the accuracy of the interconnect delay estimates can be improved by deploying the conductance effect. The simulation results shows the proposed interconnect scheme performance is better than the existing in terms of delay, power and the figure of merit. The performance analysis depicts that the proposed scheme has improved its figure of merit with minimum and maximum of 21.12% and 49.13%. The analysis is validated through extensive simulations on a 250 nm CMOS technology.
机译:在本简介中,我们基于一阶和二阶矩提供了一种简单的近似形式的延迟估计,该矩处理集总和分布线的任意电压和电导效应。通过保留Elmore延迟模型的特征,该模型通过将电导(G)合并到电阻,电容(RC)网络中,引入了一个简单的可处理延迟公式。 RCG模型达到快速稳态条件,并且可以通过部署电导效应来提高互连延迟估计的准确性。仿真结果表明,所提出的互连方案在延迟,功耗和品质因数方面均优于现有互连方案。性能分析表明,该方案以最小和最大分别为21.12%和49.13%的方式提高了品质因数。该分析通过在250 nm CMOS技术上的广泛模拟进行了验证。

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