Generation of Charged Nanoparticles During the Synthesis of GaN Nanostructures by Atmospheric-Pressure Chemical Vapor Deposition

摘要

The possibility that GaN charged nanoparticles might be generated during the synthesis of GaN nanostructures was examined in an atmospheric-pressure chemical vapor deposition (CVD) process using a differential mobility analyzer combined with a Faraday cup electrometer. Both positively and negatively charged nanoparticles in the size range of 10-100 nm were generated in the reactor of the CVD process using Ga₂O₃ precursor and NH₃ gas. With decreasing flow rate of NH₃ from 400 to 0 standard cubic centimeter per min (sccm) and decreasing reactor temperature from 1100°C to 500°C, the size and the number concentration of charged nanoparticles decreased. As the size and the number density decreased, the size of deposited GaN hexagonal crystals decreased and eventually GaN nanowires began to grow without catalysts.Copyright 2012 American Association for Aerosol ResearchView full textDownload full textRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/02786826.2012.693977