Generation of Charged Nanoparticles During the Synthesis of Silicon Nanowires by Chemical Vapor Deposition

摘要

The generation of charged nanoparticles in the gas phase has frequently been reported during the synthesis of thin films and nanostructures, such as nanowires, using chemical vapor deposition (CVD). In an effort to confirm whether charged silicon nanoparticles were also generated during the synthesis of Si nanowires by CVD, a differential mobility analyzer (DMA) combined with a Faraday cup electrometer (FCE) was connected to an atmospheric-pressure CVD reactor under typical conditions for Si nanowire growth. DMA measurements showed that both positively and negatively charged nanoparticles were abundantly generated in the gas phase during CVD. The process parameters such as reactor temperature, molar ratio of SiCl4/H2, and hydrogen flow rate affected not only the growth behavior of the Si nanowires but also the size distribution of both positively and negatively charged nanoparticles.