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Accurate closed-form expressions for the frequency-dependent line parameters of on-chip interconnects on lossy silicon substrate

机译:损耗硅衬底上片上互连的频率相关的线参数的精确闭式表达式

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摘要

Accurate closed-form expressions for the complete frequency-dependent R, L, G, C line parameters of microstrip lines on lossy silicon substrate are presented. The closed-form expressions for the frequency-dependent series impedance parameters are obtained using a complex image method. The frequency-dependent shunt admittance parameters are expressed in closed form in terms of the shunt capacitances obtained in the low and high frequency limits. The proposed closed-form solutions are shown to be in good agreement with the electromagnetic solutions.
机译:给出了有损硅衬底上微带线的完整频率相关的R,L,G,C线参数的精确闭式表达式。使用复杂的图像方法获得频率相关的串联阻抗参数的闭式表达式。频率相关的分流导纳参数以在低频和高频极限中获得的分流电容的闭合形式表示。建议的封闭形式解决方案与电磁解决方案非常吻合。

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