Fabrication and Characteristics of 40-Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Laser Modules

摘要

We have developed 40-Gb/s traveling-wave electroabsorption-modulator-integrated distributed feedback laser (TW-EML) modules using several advanced technologies. First, we have adopted a selective area growth (SAG) method in the fabrication of the 40-Gb/s EML device to provide active layers for the laser and the electroabsorption modulators (EAMs) simultaneously. The fabricated device shows that the measured 3-dB bandwidth of electrical-to-optical (E/O) response reaches about 45 GHz and the return loss $({ S}_{11})$ is kept below $-$10 dB up to 50 GHz . For the module design of the device, we mainly considered electrical and optical factors. The measured ${rm S}_{11}$ of the fabricated 40 Gb/s TW-EML module is below $-$ 10 dB up to about 30 GHz and the 3-dB bandwidth of the E/O response reaches over 35 GHz. We also have developed two types of coplanar waveguide (CPW) for the application of the driver amplifier integrated 40 Gb/s TW-EML module, which is a system-on-package (SoP) composed of an EML device and a driver amplifier device in a module. The measured ${ S}_{11}$ of the two-step-bent CPW is below $-$10 dB up to 35 GHz and the measured ${ S}_{11}$ of the parallel type CPW is below $-$10 dB up to 39 GHz.