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机译:基于GaAs / Eras / Gaas异质结构的1550nm兼容超快光电导电材料
Nanjing Univ Coll Engn & Appl Sci Dept Mat Sci & Engn Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Nanjing 210093 Peoples R China;
Nanjing Univ Coll Engn & Appl Sci Dept Mat Sci & Engn Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Coll Engn & Appl Sci Dept Mat Sci & Engn Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Coll Engn & Appl Sci Dept Mat Sci & Engn Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China|Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China|Nanjing Univ Jiangsu Key Lab Artificial Funct Mat Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Nanjing 210093 Peoples R China;
Nanjing Univ Coll Engn & Appl Sci Dept Mat Sci & Engn Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Nanjing 210093 Peoples R China;
Nanjing Univ Coll Engn & Appl Sci Dept Mat Sci & Engn Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China|Nanjing Univ Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China|Nanjing Univ Jiangsu Key Lab Artificial Funct Mat Nanjing 210093 Peoples R China;
Nanjing Univ Coll Engn & Appl Sci Dept Mat Sci & Engn Natl Lab Solid State Microstruct Nanjing 210093 Peoples R China;
1550 nm compatible; GaAs; ErAs; GaAs heterostructure; infrared absorption; molecular beam epitaxy; ultrafast photo#8208; response;
机译:1550nm ErAs:In(Al)GaAs大面积光电导发射极
机译:1550 nm ErAs:ln(Al)GaAs大面积光电导发射器
机译:迈向1550 nm InGaAs光电导开关以产生太赫兹
机译:用于在1550 nm处产生THz的光电导材料:ErAs:GaAs与基于InGaAs的材料
机译:GaAs /(Ga,Al)As多量子阱和块状GaAs中的热电子光电导率
机译:GaAs1-xBix / GaNyAs1-y II型量子阱:基于GaAs的近红外和中红外光子学的新型应变平衡异质结构
机译:多能砷离子注入砷化镓制造的超快光电导开关和太赫兹螺旋天线中的暗电流和后缘抑制
机译:可见光谱(λ= 650nm)光电泵浦(脉冲,300K)激光操作垂直腔alas-alGaas / Inalp-InGap量子阱异质结构利用天然氧化物反射镜