Low-Temperature Growth of Well-Aligned (3-Ga_2O_3 Nanowires from a Single-Source Organometallic Precursor

摘要

Monoclinic Ga_2O_3 (β-Ga_2O_3) exhibits a wide bandgap of 4.9 eV and can be an insulator or an n-type semiconductor depending on the growth conditions employed. The electrical conductivity of β-Ga_2O_3 can be varied by controlling the concentration of the oxygen vacancy in the crystal or by doping with ZrO_2, TiO_2, MgO, or SnO_2. Therefore, β-Ga_2O_3 has potential applications in optoelectronic devices and high-temperature-stable sensors. Recently, β-Ga_2O_3 nanowires have been synthesized by various high-temperature methods, including the arc-discharge method, the vapor-liquid-solid (VLS) method carbothermal reduction, thermal oxidation via the vapor-solid (VS) process, and so on.