Structural and Electrical Characterization of a Block Copolymer-Based Unipolar Nonvolatile Memory Device

摘要

Polymeric memory devices have attracted a great amount of attention due to their low fabrication cost, good scalability, print-ability, simplicity of device structure, and three-dimensional stackabilityi. Furthermore, polymeric materials in particular have unique properties, such as flexibility and easy processability by spin-coating, ink-jet printing, and roll-to-roll. These merits have further accelerated the development of several types of polymer-based memory devices such as rewritable memory, write-once read-many times (WORM) memory, and dynamic random access memory (DRAM).