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Flexible Low-Voltage Organic Complementary Circuits: Finding the Optimum Combination of Semiconductors and Monolayer Gate Dielectrics

机译:灵活的低压有机互补电路:找到半导体和单层栅极电介质的最佳组合

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摘要

The organic semiconductor DNTT (dinaphtho-[2,3-b:2',3'-f] thieno[3,2-b]thiophene) and its didecyl- and diphenyl derivatives C_(10)-DNTT and DPh-DNTT have recently demonstrated great potential for the realization of high-performance p-channel thin-film transistors (TFTs), with charge-carrier mobilities close to 10 cm~2/Vs, small parasitic contact resistances and exceptional air stability. In addition, it has been found that the carrier mobility in vacuum-deposited films of these small-molecule thienoacenes is not significantly affected by the substrate roughness, so that TFTs and circuits based on these semiconductors show excellent performance not only when fabricated on smooth silicon or glass substrates, but also when fabricated on much rougher substrates, such as plastic foil, printing paper or banknotes. These novel semiconductors therefore show great promise for the realization of flexible, large-area electronics systems, such as sensor arrays and active-matrix displays.
机译:有机半导体DNTT(二萘并-[2,3-b:2',3'-f]噻吩并[3,2-b]噻吩)及其双癸基和二苯基衍生物C_(10)-DNTT和DPh-DNTT具有最近,人们展示了实现高性能p沟道薄膜晶体管(TFT)的巨大潜力,其载流子迁移率接近10 cm〜2 / Vs,寄生接触电阻小,并且具有出色的空气稳定性。另外,已经发现,这些小分子硫杂环丁烷的真空沉积膜中的载流子迁移率不受衬底粗糙度的显着影响,因此,基于TFT和基于这些半导体的电路不仅在光滑的硅上制造时也表现出优异的性能。或玻璃基板,但也可以在更粗糙的基板(例如塑料箔,打印纸或钞票)上制造。因此,这些新颖的半导体对于实现灵活的大面积电子系统(如传感器阵列和有源矩阵显示器)具有广阔的前景。

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  • 来源
    《Advanced Materials》 |2015年第2期|207-214|共8页
  • 作者单位

    Max Planck Institute for Solid State Research Heisenbergstr. 1, 70569, Stuttgart, Germany,Institute for Organic Chemistry Technical University Freiberg 09596, Freiberg, Germany;

    Max Planck Institute for Solid State Research Heisenbergstr. 1, 70569, Stuttgart, Germany;

    Department of Applied Chemistry Institute for Advanced Materials Research Hiroshima University Higashi-Hiroshima, Japan;

    RIKEN Center for Emergent Matter Science (CEMS) Wako, Saitama, Japan;

    Institute for Nano- and Microelectronic Systems University of Stuttgart, Germany,Institute for Microelectronics IMS Chips, Stuttgart, Germany;

    Institute for Microelectronics IMS Chips, Stuttgart, Germany;

    Institute for Nano- and Microelectronic Systems University of Stuttgart, Germany,Institute for Microelectronics IMS Chips, Stuttgart, Germany;

    Institute for Organic Chemistry Technical University Freiberg 09596, Freiberg, Germany;

    Max Planck Institute for Solid State Research Heisenbergstr. 1, 70569, Stuttgart, Germany;

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