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机译:通过垂直界面操纵实现高电子迁移率的波纹异质结金属氧化物薄膜晶体管
Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea;
Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea;
Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea;
Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea;
Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea;
Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA;
Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea;
Chung Ang Univ, Sch Elect & Elect Engn, Seoul 06974, South Korea;
corrugated structures; heterointerfaces; metal-oxide thin-film transistors; solution processes; TCAD simulations;
机译:从溶液中生长出前所未有的电子迁移率的异质结氧化物薄膜晶体管
机译:AlGaN / GaN / InGaN / GaN双异质结高电子迁移率晶体管中的界面散射分析
机译:AlGaN / GaN / InGaN / GaN双异质结高电子迁移率晶体管中的界面散射分析
机译:增强高迁移率升高金属金属氧化物薄膜晶体管的可扩展性和可靠性
机译:了解具有高k栅极介电常数的固溶处理金属氧化物薄膜晶体管的迁移率。
机译:从溶液中生长出前所未有的电子迁移率的异质结氧化物薄膜晶体管
机译:使用离子导电栅极电介质,TiO2栅极接口电子捐赠的作用,用于开发溶液处理的高性能一伏金属氧化物薄膜晶体管
机译:改进的应变HEmT(高电子迁移率晶体管)特性使用双(0.65)Ga(0.35)as / In(0.52)al(0.48)设计的双异质结。