Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors

摘要

This paper presents detailed investigations on the direct-current (DC) characteristics of an AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility transistor (DH-HEMT) using two-dimensional numerical analysis. In this work, the hot-electron effect is taken into account and implemented in the hydrodynamic model. The results indicate that carrier transport in this kind of device exhibits properties significantly different from that in a conventional AlGaN/GaN HEMT. Due to imperfections at the GaN/InGaN interface, scattering caused by the interface roughness, phonons, etc. inhibit the negative differential conductance in high electric field. In addition, the velocity increment of electrons around the gate edge is dominated by the overshoot effect rather than the phonon effect. The energy exchange between phonons and electrons, as presented in this paper, illustrates that the dissipated power is just a small portion of the exchanged energy. For further performance improvement, more lattice-matched material with strong polarization for the barrier layer is proposed.