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首页> 外文期刊>Advanced Functional Materials >Successive Spray Deposition of P3HT/PCBM Organic Photoactive Layers: Material Composition and Device Characteristics
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Successive Spray Deposition of P3HT/PCBM Organic Photoactive Layers: Material Composition and Device Characteristics

机译:P3HT / PCBM有机光敏层的连续喷涂沉积:材料组成和器件特性

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摘要

Controlling the active layer composition in organic electronic devices represents one of the major challenges in their fabrication. In particular, the composition of mixed donor/acceptor active layers for photosensitive device applications is known to strongly influence device performance. Here, an alternative approach for the preparation of organic heterojunction photoactive layers by successive spray deposition of the donor material, poly(3-hexylthi-ophene) (P3HT), and acceptor material, [6,6]-phenyl C61)-butyric acid methyl ester (PCBM), is reported. Optical absorption spectra, X-ray reflectivity, and cross-sectional transmission electron microscopy investigations are used to indicate the penetration of PCBM into a previously deposited P3HT layer and the spontaneous formation of a bulk heterojunction (BHJ) within the active layer, which provides the large interfacial area needed for efficient exciton dissociation. It is shown that organic photodiodes composed of photoactive layers prepared using this fabrication method exhibit a performance comparable to conventional BHj devices in which the active layer is rigorously blended in advance. Moreover, separate handling of the individual materials and their deposition from distinct solutions enables an enhanced control of the active layer composition and hence increases the ability of tuning device characteristics.
机译:控制有机电子器件中的活性层组成代表了其制造中的主要挑战之一。特别地,已知用于光敏器件应用的混合供体/受体活性层的组成强烈地影响器件性能。在这里,通过连续喷涂施主材料,聚(3-己基噻吩)(P3HT)和受体材料[6,6]-苯基C61)-丁酸制备有机异质结光敏层的另一种方法甲基酯(PCBM)。光学吸收光谱,X射线反射率和横截面透射电子显微镜研究用于表明PCBM渗透到先前沉积的P3HT层中以及在有源层中自发形成本体异质结(BHJ),从而提供了有效激子离解需要较大的界面面积。结果表明,用这种制造方法制备的由光敏层组成的有机光电二极管表现出与常规BHj器件相当的性能,在常规的BHj器件中,有源层是预先严格混合的。此外,单独处理各个材料及其从不同溶液中沉积的方法,可以增强对活性层组成的控制,从而提高调节器件特性的能力。

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  • 来源
    《Advanced Functional Materials》 |2012年第19期|4078-4086|共9页
  • 作者单位

    Institute for Nanoelectronics Technische Universitaet Muenchen Arcisstrasse 21, 80333 Munich, Germany;

    Department of Chemistry Ludwig-Maximilians-Universitat Muenchen Butenandstrasse 11, 81377 Munich, Germany;

    Department of Chemistry Ludwig-Maximilians-Universitat Muenchen Butenandstrasse 11, 81377 Munich, Germany;

    Department of Chemistry Ludwig-Maximilians-Universitat Muenchen Butenandstrasse 11, 81377 Munich, Germany;

    Lehrstuhl fur Funktionelle Materialien Physik-Department E13, Technische Universitat Munchen James-Franck-Strafsse 1, 85747 Garching, Germany;

    Department of Chemistry Ludwig-Maximilians-Universitat Muenchen Butenandstrasse 11, 81377 Munich, Germany;

    Institute for Nanoelectronics Technische Universitaet Muenchen Arcisstrasse 21, 80333 Munich, Germany;

    Institute for Nanoelectronics Technische Universitaet Muenchen Arcisstrasse 21, 80333 Munich, Germany;

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