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Measuring Domain Sizes and Compositional Heterogeneities in P3HT-PCBM Bulk Heterojunction Thin Films with ~1H Spin Diffusion NMR Spectroscopy

机译:用〜1H自旋扩散NMR光谱法测量P3HT-PCBM体异质结薄膜中的畴尺寸和组成异质性

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摘要

The application of ~1H spin diffusion nuclear magnetic resonance (NMR) is expanded to polymer-fullerene blends for bulk heterojunction (BHJ) organic photovoltaics (OPV) by developing a new experimental methodology for measuring the thin films used in poly-3-hexylthiophene-phenyl C61-butyric acid methyl ester (P3HT-PCBM) OPV devices and by creating an analysis framework for estimating domain size distributions. It is shown that variations in common P3HT-PCBM BHj processing parameters such as spin-coating speed and thermal annealing can significantly affect domain size distributions, which in turn affect power conversion efficiency. ~1H spin diffusion NMR analysis reveals that films spin-cast at fast speeds in dichlorobenzene are primarily composed of small (<10 nm) domains of each component; these devices exhibit low power conversion efficiencies (η = 0.4%). Fast-cast films improve substantially by thermal annealing, which causes nanometer-scale coarsening leading to higher efficiency (η = 2.2%). Films spin-cast at slow speeds and then slowly dried exhibit larger domains and even higher efficiencies (η = 2.6%), but do not benefit from thermal annealing. The ~1H spin diffusion NMR results show that a significant population of domains tens of nanometers in size is a common characteristic of samples with higher efficiencies.
机译:通过开发一种新的实验方法来测量用于聚-3-己基噻吩的薄膜,〜1H自旋扩散核磁共振(NMR)的应用已扩展到用于本体异质结(BHJ)有机光伏(OPV)的聚合物-富勒烯共混物中。苯基C61-丁酸甲酯(P3HT-PCBM)OPV设备,并通过创建分析框架来估算域大小分布。结果表明,常见的P3HT-PCBM BHj工艺参数的变化(例如旋涂速度和热退火)会显着影响畴尺寸分布,进而影响功率转换效率。 〜1H自旋扩散NMR分析表明,在二氯苯中快速旋转浇铸的薄膜主要由各个成分的小(<10 nm)畴组成;这些器件具有低功率转换效率(η= 0.4%)。快速浇铸膜通过热退火得到了显着改善,这会引起纳米级的粗化,从而导致更高的效率(η= 2.2%)。以低速旋转浇铸然后缓慢干燥的薄膜表现出更大的畴甚至更高的效率(η= 2.6%),但不能从热退火中受益。 〜1H自旋扩散NMR结果表明,数十纳米大小的大量畴是具有较高效率的样品的共同特征。

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  • 来源
    《Advanced Functional Materials》 |2012年第6期|p.1255-1266|共12页
  • 作者单位

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

    National Institute of Standards and Technology 100 Bureau Drive, Gaithersburg, MD 20899-8541, USA;

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