Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices

摘要

Resistive random access memory (ReRAM) devices powered by piezoelectric nanogenerators (NGs) have been investigated for their application to future implantable biomedical devices. Biocompatible (Na0.5K0.5)NbO3 (NKN) films that are grown at 300 degrees C on TiN/SiO2/Si and flexible TiN/Polyimide (TiN-PI) substrates are used for ReRAM and NGs, respectively. These NKN films have an amorphous phase containing NKN nanocrystals with a size of 5.0 nm. NKN ReRAM devices exhibit typical bipolar switching behavior that can be explained by the formation and rupture of oxygen-vacancy fi laments. They have good ReRAM properties such as a large ratio of R-HRS to R-LRS as well as high reliability. The NKN film grown on flexible TiN-PI substrate exhibits a high piezoelectric strain constant of 50 pm V-1. The NKN NG has a large open-circuit output voltage of 2.0 V and a short-circuit output current of 40 nA, which are sufficient to drive NKN ReRAM devices. Stable switching properties with a large ON/OFF ratio of 10(2) are obtained from NKN ReRAM driven by NKN NG.