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Nanostructured Si/Organic Heterojunction Solar Cells with High Open-Circuit Voltage via Improving Junction Quality

机译:通过改善结质量,具有高开路电压的纳米结构硅/有机异质结太阳能电池

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摘要

Nanostructured silicon (Si) can provide improved light harvest efficiencies in organic-Si heterojunction solar cells due to its low light reflection ratio compared with planar one. However, the associated large surface/volume ratio of nanostructured Si suffers from serious surface recombination as well as poor adhesion with organics in organic-Si heterojunction solar cells, which leads to an inferior open-circuit voltage (V-oc). Here, we develop a simple and effective method to suppress charge recombination as well as enhancing adhesion force between nanostructured Si and organics by incorporating a silane chemical, namely 3-glycidoxypropyltrimethoxydsilane (GOPS). GOPS can chemically graft onto nanostructured Si and improve the aqueous organic wetting properties, suppressing surface charge recombination velocity dramatically. In addition, this chemically grafted layer can enhance adhesion force between organics and Si. In such a way, a record V-oc of 640 mV associated with a power conversion efficiency of 14.1% is obtained for organic-nanostructured Si heterojunction devices. These findings suggest a promising approach to low-cost and simple fabrication for high-performance organic-Si solar cells.
机译:纳米结构的硅(Si)与平面硅相比具有较低的光反射率,因此可以提高有机硅异质结太阳能电池的光收集效率。然而,纳米结构硅的相关的大的表面/体积比遭受严重的表面复合以及在有机-Si异质结太阳能电池中与有机物的不良粘附,这导致较低的开路电压(V-oc)。在这里,我们开发了一种简单有效的方法,通过掺入硅烷化学物质(即3-环氧丙氧基丙基三甲氧基硅烷(GOPS))来抑制电荷复合以及增强纳米结构Si与有机物之间的粘附力。 GOPS可以化学接枝到纳米结构的Si上并改善水性有机润湿性,从而显着抑制表面电荷的复合速度。另外,该化学接枝层可以增强有机物与Si之间的粘合力。以这种方式,对于有机纳米结构化的Si异质结器件,获得了640 mV的记录V-oc,其功率转换效率为14.1%。这些发现提出了一种有前途的低成本高性能有机硅太阳能电池制造方法。

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  • 来源
    《Advanced Functional Materials》 |2016年第28期|5035-5041|共7页
  • 作者单位

    Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China;

    Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China;

    Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China;

    Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China;

    Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China;

    Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China;

    Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China;

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