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首页> 外文期刊>Advanced Functional Materials >Exploring Wholly Doped Conjugated Polymer Films Based on Hybrid Doping: Strategic Approach for Optimizing Electrical Conductivity and Related Thermoelectric Properties
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Exploring Wholly Doped Conjugated Polymer Films Based on Hybrid Doping: Strategic Approach for Optimizing Electrical Conductivity and Related Thermoelectric Properties

机译:基于杂交掺杂的全掺杂共轭聚合物薄膜探索:优化电导率和相关热电性能的战略方法

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Conventional chemical doping processes for conjugated polymers (CPs) often degrade the film morphology or cause unsatisfactory doping efficiency owing to the aggregation formation between charged species or insufficient dopant diffusion. In this work, a new strategic doping method, "hybrid doping," is suggested for maximizing the doping efficiency of CPs without hampering the surface morphology of the CP films. The advantage of hybrid doping is that it combines mixture blending and sequential soaking processes. Based on systemic characterizations including spectroscopic, structural, and electrical analyses, it is revealed that hybrid doping enables whole area doping for the crystalline and amorphous regions of CP films, and thus an unprecedentedly high electrical conductivity of up to 81.5 and 639.1 S cm(-1), for poly(3-hexylthiophene) P3HT and poly (2-([2,2 '-bithiophen]-5-yl)-3,8-difluoro-5,10-bis(5-octylpentadecyl)-5,10-dihydroindolo [3,2-b]indole) (PIDF-BT), respectively, is achieved. Furthermore, the exceptional electrical conductivity compensates a reduced Seebeck coefficient, resulting in excellent power factors up to 26.8 and 76.1 mu W m(-1)K(-2)for thermoelectric devices based on doped-P3HT and PIDF-BT films, respectively, which is among the highest levels for semiconducting CPs. Hybrid doping is a strategic approach for the simultaneous optimization of electrical conductivity and thermoelectric properties of various CPs.
机译:常规的缀合聚合物(CPS)的化学掺杂方法经常降解薄膜形态或由于带电物质或掺杂剂扩散不足之间的聚集形成而导致不令人满意的掺杂效率。在这项工作中,建议新的战略掺杂方法“混合掺杂”,以最大化CPS的掺杂效率而不会阻碍CP薄膜的表面形态。杂交掺杂的优点是它结合了混合混合和顺序浸泡过程。基于全系统特征,包括光谱,结构和电气分析,揭示杂交掺杂能够使CP膜的结晶和无定形区域的全部区域掺杂,因此是前所未有的高达81.5和639.1厘米的电导率( - ) 1),用于聚(3-己基噻吩)P3HT和聚(2 - ([2,2'-二苯甲烯烯烃] -5-Y1)-3,8-二氟-5,10-双(5-辛基戊基)-5,达到10-二氢吲哚[3,2-B]吲哚)(PIDF-BT)。此外,卓越的导电性补偿了基于掺杂P3HT和PIDF-BT薄膜的热电装置的优异功率因素,导致高达26.8和76.1μm(-2)的优异电源因素。这是半导体CPS的最高水平。杂交掺杂是同时优化各种CPS的电导率和热电性能的战略方法。

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