Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

摘要

Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al_(0.3)Ga_(0.7)As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.