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Chemical bonding at the Fe/Tix (X = C, N or O) interfaces

机译:Fe / Tix(X = C,N或O)界面上的化学键

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摘要

First principles molecular orbital calculations for the Fe/Tix (X = C, N or O) interfaces have been made by the use of the spin-polarized discrete-variational Xx method. At the interfaces, no significant charge transfer occurs between the Fe and TiX layers. Ionic interactions is small and covalent bonding is predominant at the interface. The interfacial bond strength is stronger when Fe atoms are located on X atoms, that is, the Fe-on-X geometry of the Baker-Nutting orientation relationship. The Fe/TiX bond strength decreases with the rising atomic number of X. The antibonding of the Fe-O bonds at the Fe/TiO interfaces is noteworthy.
机译:第一原理通过使用自旋极化离散变分Xx方法,对Fe / Tix(X = C,N或O)界面进行了分子轨道计算。在界面处,Fe和TiX层之间没有发生明显的电荷转移。离子相互作用很小,共价键主要存在于界面上。当Fe原子位于X原子上时,界面结合强度会更强,即Baker-Nutting取向关系的Fe-on-X几何形状。 Fe / TiX键强度随X原子序数的增加而降低。值得注意的是,Fe-TiO键在Fe / TiO界面处的抗键合。

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