首页> 美国卫生研究院文献>The Journal of Biological Chemistry >Affixing N-terminal α-Helix to the Wall of the Voltage-dependent Anion Channel Does Not Prevent Its Voltage Gating
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Affixing N-terminal α-Helix to the Wall of the Voltage-dependent Anion Channel Does Not Prevent Its Voltage Gating

机译:将N末端α-螺旋固定到电压依赖性阴离子通道的壁上并不能防止其电压门控

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摘要

The voltage-dependent anion channel (VDAC) governs the free exchange of ions and metabolites between the mitochondria and the rest of the cell. The three-dimensional structure of VDAC1 reveals a channel formed by 19 β-strands and an N-terminal α-helix located near the midpoint of the pore. The position of this α-helix causes a narrowing of the cavity, but ample space for metabolite passage remains. The participation of the N-terminus of VDAC1 in the voltage-gating process has been well established, but the molecular mechanism continues to be debated; however, the majority of models entail large conformational changes of this N-terminal segment. Here we report that the pore-lining N-terminal α-helix does not undergo independent structural rearrangements during channel gating. We engineered a double Cys mutant in murine VDAC1 that cross-links the α-helix to the wall of the β-barrel pore and reconstituted the modified protein into planar lipid bilayers. The modified murine VDAC1 exhibited typical voltage gating. These results suggest that the N-terminal α-helix is located inside the pore of VDAC in the open state and remains associated with β-strand 11 of the pore wall during voltage gating.
机译:电压依赖性阴离子通道(VDAC)控制线粒体与细胞其余部分之间离子和代谢物的自由交换。 VDAC1的三维结构揭示了由19条β链和位于孔中点附近的N端α螺旋形成的通道。该α-螺旋的位置会导致空腔变窄,但仍有足够的代谢物通过空间。 VDAC1的N端参与电压门控过程已被很好地确定,但是分子机制仍在争论中。但是,大多数模型都需要对该N末端片段进行大的构象变化。在这里,我们报告孔衬N末端α-螺旋在通道门控过程中未经历独立的结构重排。我们在鼠VDAC1中设计了一个双Cys突变体,该突变体将α-螺旋交联到β-桶孔壁,然后将修饰的蛋白重构为平面脂质双层。改良的鼠VDAC1表现出典型的电压门控。这些结果表明,N端α-螺旋在打开状态下位于VDAC的孔内部,并且在电压门控期间保持与孔壁的β-链11相关。

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