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Electrodeposition of Nanoparticles and Continuous Film of CdSe on n-Si (100)

机译:N-Si(100)上CDSE的纳米颗粒和连续膜的电沉积

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摘要

CdSe electrodeposition on n-Si (100) substrate was investigated in sulfuric acid solution. The behaviour and the deposition of the precursors (Cd and Se) were studied separately at first. Then, we explored both the alternated deposition, one layer by one, as well as the simultaneous co-deposition of the two elements to form the CdSe semiconductor. Varying the deposition conditions, we were able to obtain nanoparticles, or a thin film, on the surface of the electrode. The samples were then characterised microscopically and spectroscopically with SEM, XRD and XPS. Finally, we evaluated the induced photoemission of the deposit for the application in optoelectronics.
机译:在硫酸溶液中研究了N-Si(100)衬底上的CDSE电沉积。首先单独研究前体(CD和SE)的行为和沉积。然后,我们探讨了交替的沉积,一层一层,以及两个元件的同时共沉积以形成CDSE半导体。改变沉积条件,我们能够在电极表面上获得纳米颗粒或薄膜。然后将样品在SEM,XRD和XPS中进行显微镜和光谱。最后,我们评估了在光电子中施用沉积物的诱导光曝光。

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