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Phase Formation and Thermal Stability of Reactively Sputtered YTaO

机译:反应溅射的相位形成和热稳定性YTAO

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摘要

Y(1−x)/2Ta(1−x)/2ZrxO2 coatings with 0 to 44 mol% ZrO2 were synthesized by sputtering. Phase-pure M’-YTaO4 coatings were obtained at a substrate temperature of 900 °C. Alloying with ZrO2 resulted in the growth of M’ along with t-Zr(Y,Ta)O2 for ≤15 mol%, while for ≥28 mol%, ZrO2 X-ray diffraction (XRD) phase-pure metastable t was formed, which may be caused by small grain sizes and/or kinetic limitations. The former phase region transformed into M’ and M and the latter to an M’ + t and M + t phase region upon annealing to 1300 and 1650 °C, respectively. In addition to M and t, T-YTa(Zr)O4 phase fractions were observed at room temperature for ZrO2 contents ≥28 mol% after annealing to 1650 °C. T phase fractions increased during in situ heating XRD at 80 °C. At 1650 °C, a reaction with the α-Al2O3 substrate resulted in the formation of AlTaO4 and an Al-Ta-Y-O compound.
机译:通过溅射合成具有0至44mol%ZrO2的Y(1-x)/ 2Ta(1-x)/ 2zrxO2涂层。在900℃的底物温度下获得相纯M'-YTAO4涂层。用ZrO 2合金化导致M'与T-Zr(Y,Ta)O 2一起生长≤15mol%,而形成≥28mol%,形成ZrO2 X射线衍射(XRD)相纯亚稳态T,这可能是由小颗粒尺寸和/或动力学限制引起的。在退火到1300和1650℃时,前相位区域在M'和M以及后后部变为M'+ T和M + T和M + T相位区域。除了M和T,在室温下在退火至1650℃的室温下在室温下观察到T-YTA(Zr)O4相级分。在80℃下原位加热XRD期间T相级分增加。在1650℃下,与α-Al 2 O 3基底的反应导致形成AtaO 4和Al-TA-Y-O化合物。

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