Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

摘要

Schematic diagram of the InSe FET exposed to ambient conditions, in the presence of several gas molecules (such as H O or O ). The Si substrate serves as the gate electrode and the covered In film acts as the surface dopant. AFM image and the corresponding height profile of the InSe channel. The inset shows the typical OM image of the InSe FET, where the length and width of the InSe channel are 13 and 31 μm, respectively. , Transfer characteristics and the gate leakage curves at drain voltage  = 0.1 V for the 15 representative InSe FETs under the vacuum and ambient conditions, respectively. Note that the arrows mark the directions of the gate voltage sweep and Δ means the threshold voltage shift. Histogram of the threshold voltage shift for InSe V- and A-FETs and the Gaussian fit (solid lines) based on the statistical database.