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Separation and Recovery of Refined Si from Al–Si Melt by Modified Czochralski Method

机译:改进的切克劳斯基方法从铝硅熔体中分离和回收精制硅

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摘要

Separation of refined silicon from Al–Si melt is still a puzzle for the solvent refining process, resulting in considerable waste of acid and silicon powder. A novel modified Czochralski method within the Al–Si alloy is proposed. After the modified Czochralski process, a large amount of refined Si particles was enriched around the seed crystalline Si and separated from the Al–Si melt. As for the Al–28%Si with the pulling rate of 0.001 mm/min, the recovery of refined Si in the pulled-up alloy (PUA) sample is 21.5%, an improvement of 22% compared with the theoretical value, which is much larger 1.99 times than that in the remained alloy (RA) sample. The content of impurities in the PUA is much less than that in the RA sample, which indicates that the modified Czochralski method is effective to improve the removal fraction of impurities. The apparent segregation coefficients of boron (B) and phosphorus (P) in the PUA and RA samples were evaluated. These results demonstrate that the modified Czochralski method for the alloy system is an effective way to enrich and separate refined silicon from the Al–Si melt, which provide a potential and clean production of solar grade silicon (SoG-Si) for the future industrial application.
机译:从Al-Si熔体中分离出精制硅仍然是溶剂精制过程的难题,这会导致酸和硅粉的大量浪费。提出了一种在Al-Si合金中的新型改进的Czochralski方法。经过改进的切克劳斯基工艺之后,大量的精制硅颗粒在晶种硅周围富集并与Al-Si熔体分离。对于提拉速度为0.001 mm / min的Al–28%Si,提拉合金(PUA)样品中精炼Si的回收率为21.5%,与理论值相比提高了22%。比剩余合金(RA)样品大1.99倍。 PUA中的杂质含量远小于RA样品中的杂质含量,这表明改进的切克劳斯基方法可有效提高杂质去除率。评估了PUA和RA样品中硼(B)和磷(P)的表观偏析系数。这些结果表明,用于合金体系的改进的Czochralski方法是从Al-Si熔体中富集和分离精制硅的有效方法,这为将来的工业应用提供了潜在的清洁生产太阳能级硅(SoG-Si) 。

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