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nm- thick conformal pore-sealing of self-assembled mesoporous silica by plasma-assisted atomic layer deposition

机译:等离子体辅助原子层沉积自组装中孔二氧化硅的纳米厚共形孔密封

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摘要

On a porous substrate, regular atomic layer deposition (ALD) not only takes place on top of the substrate but also penetrates into the internal porosity. Here we report a plasma-assisted process in which the ALD precursors are chosen to be non-reactive unless triggered by plasma, so that ALD can be spatially defined by the supply of plasma irradiation. Since plasma cannot penetrate within the internal porosity, ALD has been successfully confined to the immediate surface. This not only gives a possible solution for sealing of porous low dielectric constant films with a conformal layer of nm-scale thickness, but also enables us to progressively reduce the pore size of mesoporous materials in a sub-Å/cycle fashion for membrane formation.
机译:在多孔基材上,规则的原子层沉积(ALD)不仅发生在基材的顶部,而且渗透到内部孔隙中。在这里,我们报告了一种等离子体辅助过程,其中除非被等离子体触发,否则将ALD前体选择为非反应性的,因此可以通过提供等离子体辐射在空间上定义ALD。由于等离子体无法渗透到内部孔隙中,因此ALD已成功地限制在直接表面上。这不仅为密封具有纳米级厚度的保形层的多孔低介电常数薄膜提供了可能的解决方案,而且使我们能够以亚Å/周期的方式逐渐减小介孔材料的孔径,以形成膜。

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