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Pore dimensions and the role of occupancy in unitary conductance of Shaker K channels

机译:振动筛K通道的孔径和占有率在单一电导中的作用

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摘要

K channels mediate the selective passage of K+ across the plasma membrane by means of intimate interactions with ions at the pore selectivity filter located near the external face. Despite high conservation of the selectivity filter, the K+ transport properties of different K channels vary widely, with the unitary conductance spanning a range of over two orders of magnitude. Mutation of Pro475, a residue located at the cytoplasmic entrance of the pore of the small-intermediate conductance K channel Shaker (Pro475Asp (P475D) or Pro475Gln (P475Q)), increases Shaker’s reported ∼20-pS conductance by approximately six- and approximately threefold, respectively, without any detectable effect on its selectivity. These findings suggest that the structural determinants underlying the diversity of K channel conductance are distinct from the selectivity filter, making P475D and P475Q excellent probes to identify key determinants of the K channel unitary conductance. By measuring diffusion-limited unitary outward currents after unilateral addition of 2 M sucrose to the internal solution to increase its viscosity, we estimated a pore internal radius of capture of ∼0.82 Å for all three Shaker variants (wild type, P475D, and P475Q). This estimate is consistent with the internal entrance of the Kv1.2/2.1 structure if the effective radius of hydrated K+ is set to ∼4 Å. Unilateral exposure to sucrose allowed us to estimate the internal and external access resistances together with that of the inner pore. We determined that Shaker resistance resides mainly in the inner cavity, whereas only ∼8% resides in the selectivity filter. To reduce the inner resistance, we introduced additional aspartate residues into the internal vestibule to favor ion occupancy. No aspartate addition raised the maximum unitary conductance, measured at saturating [K+], beyond that of P475D, suggesting an ∼200-pS conductance ceiling for Shaker. This value is approximately one third of the maximum conductance of the large conductance K (BK) channel (the K channel of highest conductance), reducing the energy gap between their K+ transport rates to ∼1 kT. Thus, although Shaker’s pore sustains ion translocation as the BK channel’s does, higher energetic costs of ion stabilization or higher friction with the ion’s rigid hydration cage in its narrower aqueous cavity may entail higher resistance.
机译:K通道通过与位于外表面附近的孔选择性过滤器上的离子紧密相互作用,介导K + 跨质膜的选择性通道。尽管选择性滤光片具有很高的保守性,但不同的K通道的K + 传输性质变化很大,单位电导跨越两个数量级。 Pro475的突变(一种位于小中导K通道摇床(Pro475Asp(P475D)或Pro475Gln(P475Q))孔的细胞质入口的残基)使Shaker报道的约20-pS电导增加了大约六倍和大约三倍,对其选择性没有任何可检测的影响。这些发现表明,K通道电导多样性的结构决定因素与选择性过滤器不同,这使P475D和P475Q成为确定K通道单一电导关键决定因素的出色探针。通过在向内部溶液中单方添加2 M蔗糖以增加其粘度后测量扩散受限的单位向外电流,我们估计了所有三种振荡器(野生型,P475D和P475Q)的孔内捕获半径均为〜0.82Å 。如果水合K + 的有效半径设置为〜4Å,则该估计值与Kv1.2 / 2.1结构的内部入口一致。单方面暴露于蔗糖使我们能够估计内部和外部进入阻力以及内部孔的阻力。我们确定,振动筛阻力主要存在于内腔中,而选择性过滤器中只有约8%存在。为了降低内部电阻,我们在内部前庭中引入了其他天冬氨酸残基,以利于离子占据。在饱和[K + ]下测得的天冬氨酸没有增加最大单位电导,超过了P475D,表明摇床的电导上限为〜200-pS。此值大约是大电导K(BK)通道(最高电导的K通道)的最大电导的三分之一,从而将它们的K + 传输速率之间的能隙减小到约1 kT。因此,尽管摇床的孔隙像BK通道一样保持离子易位,但更高的离子稳定能量成本或在狭窄水腔中与离子刚性水合笼的摩擦力更高,可能会带来更高的阻力。

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