ALOX LAYER FOR CONDUCTING CHANNELS FOR DEVICE OF THREE-DIMENSIONAL CHAIN

摘要

FIELD: manufacturing technology.;SUBSTANCE: multilevel stacking of memory elements having a layer of alumina oxide (AlOx) as a noble layer of HiK is proposed to ensure selectivity of stopping etching. Each stacking level includes a memory element device. Circuit includes a polycrystalline gate selection layer (poly-SGS layer) adjacent to the multi-layer stacking of the memory elements, the poly-SGS layer being intended to provide a gate selection signal for the multi-layer stacking memory elements. Circuit also includes a conductive source layer to provide a source conductor for the channel for stacking layers. AlOx layer is located between the source layer and the poly-SGS layer and provides selectivity both with dry etching, and with wet etching to form a channel for electrically connecting the memory elements to the source layer.;EFFECT: invention provides an improvement in the performance of the high-density devices produced.;20 cl, 11 dwg