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Structural and Functional Role of the Extracellular S5-P Linker in the HERG Potassium Channel

机译:细胞外S5-P接头在HERG钾通道中的结构和功能作用

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摘要

C-type inactivation in the HERG channel is unique among voltage-gated K channels in having extremely fast kinetics and strong voltage sensitivity. This suggests that HERG may have a unique outer mouth structure (where conformational changes underlie C-type inactivation), and/or a unique communication between the outer mouth and the voltage sensor. We use cysteine-scanning mutagenesis and thiol-modifying reagents to probe the structural and functional role of the S5-P (residues 571–613) and P-S6 (residues 631–638) linkers of HERG that line the outer vestibule of the channel. Disulfide formation involving introduced cysteine side chains or modification of side chain properties at “high-impact” positions produces a common mutant phenotype: disruption of C-type inactivation, reduction of K+ selectivity, and hyperpolarizing shift in the voltage-dependence of activation. In particular, we identify 15 consecutive positions in the middle of the S5-P linker (583–597) where side chain modification has marked impact on channel function. Analysis of the degrees of mutation-induced perturbation in channel function along 583–597 reveals an α-helical periodicity. Furthermore, the effects of MTS modification suggest that the NH2-terminal of this segment (position 584) may be very close to the pore entrance. We propose a structural model for the outer vestibule of the HERG channel, in which the 583–597 segment forms an α-helix. With the NH2 terminus of this helix sitting at the edge of the pore entrance, the length of the helix (∼20 Å) allows its other end to reach and interact with the voltage-sensing domain. Therefore, the “583–597 helix” in the S5-P linker of the HERG channel serves as a bridge of communication between the outer mouth and the voltage sensor, that may make important contribution to the unique C-type inactivation phenotype.
机译:HERG通道中的C型失活在电压门控K通道中是独一无二的,因为它具有极快的动力学和强大的电压敏感性。这表明HERG可能具有独特的外嘴结构(其中构象变化是C型失活的基础)和/或外嘴和电压传感器之间的唯一通信。我们使用半胱氨酸扫描诱变剂和硫醇修饰剂来探测位于通道外部前庭的HERG的S5-P(残基571-613)和P-S6(残基631-638)接头的结构和功能作用。涉及引入的半胱氨酸侧链或“高影响”位置的侧链特性改变的二硫键形成会产生常见的突变表型:破坏C型失活,降低K + 选择性以及超极化位移激活的电压依赖性。特别是,我们在S5-P接头(583-597)的中间位置确定了15个连续位置,其中侧链修饰对通道功能有明显影响。对沿着583-597的通道功能中的突变诱发的扰动程度的分析揭示了一个α螺旋周期。此外,MTS修饰的效果表明该片段的NH2末端(位置584)可能非常靠近孔入口。我们为HERG通道的外部前庭提出了一个结构模型,其中583-597段形成了一个α螺旋。由于该螺旋的NH2末端位于孔隙入口的边缘,螺旋的长度(约20Å)允许其另一端到达并与电压感应域相互作用。因此,HERG通道S5-P接头中的“ 583–597螺旋”充当了外口与电压传感器之间的沟通桥梁,这可能对独特的C型灭活表型做出了重要贡献。

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