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Paradox of low field enhancement factor for field emission nanodiodes in relation to quantum screening effects

机译:与量子屏蔽效应有关的场发射纳米二极管低场增强因子的悖论

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摘要

We put forward the quantum screening effect in field emission [FE] nanodiodes, explaining relatively low field enhancement factors due to the increased potential barrier that impedes the electron Fowler-Nordheim tunneling, which is usually observed in nanoscale FE experiments. We illustratively show this effect from the energy band diagram and experimentally verify it by performing the nanomanipulation FE measurement for a single P-silicon nanotip emitter (Φ = 4.94eV), with a scanning tungsten-probe anode (work function, Φ = 4.5eV) that constitutes a 75-nm vacuum nanogap. A macroscopic FE measurement for the arrays of emitters with a 17-μm vacuum microgap was also performed for a fair comparison.
机译:我们提出了在场发射[FE]纳米二极管中的量子屏蔽效应,解释了由于势垒增加而阻碍电子Fowler-Nordheim隧穿的相对较低的场增强因子,这种现象通常在纳米级FE实验中观察到。我们从能带图中说明性地显示了这种效应,并通过对单个P硅纳米尖端发射器(Φ= 4.94eV)进行纳米操纵FE测量,并使用扫描钨探针阳极(功函数,Φ= 4.5eV)进行了实验验证, )构成一个75纳米的真空纳米间隙。为了进行公平的比较,还对具有17μm真空微间隙的发射器阵列进行了宏观FE测量。

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