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Structural and Magnetoresistive Properties of Nanometric Films Based on Iron and Chromium Oxides on the Si Substrate

机译:硅基氧化铁和铬氧化物纳米膜的结构和磁阻性质

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摘要

Ultraviolet photons of KrF laser (248 nm) was used for the synthesis of nanometric films based on iron and chromium oxides (Fe2O3 − X(0 ≤ x ≤ 1) and Cr3 − XO3 − Y(0 ≤ x ≤ 2; 0 ≤ y ≤ 2)) with variable thickness, stoichiometry, and electrical properties. Film deposition was carried out on the silicon substrate Si < 100 > at the substrate’s temperature T S = 293 K. X-ray diffraction and X-ray reflectometry analysis were used for the obtained structure characterization. Such a combined investigation reveals the composition and texture for samples investigated and provides useful information about layer thickness and roughness. Fe2O3 − X(0 ≤ x ≤ 1) nanometric films demonstrate the negative magnetoresistance in magnetic fields up 7 kOe. At the same time, for hybrid systems of the alternate layers Fe2O3 − X(0 ≤ x ≤ 1)/Cr3 − XO3 − Y(0 ≤ x ≤ 2; 0 ≤ y ≤ 2), the positive magnetoresistance as well as the magnetic hysteresis and magnetoresistivity switching effect in the low magnetic fields were observed.
机译:使用KrF激光(248nm)的紫外线光子合成基于铁和氧化铬(Fe2O3-X(0≤x≤1)和Cr3-XO3-Y(0≤x≤2; 0≤y)的纳米薄膜≤2)),具有可变的厚度,化学计量和电性能。在硅基板Si <100>上,在基板温度T S = 293 K上进行膜沉积。使用X射线衍射和X射线反射分析法进行结构表征。这样的组合研究揭示了所研究样品的组成和质地,并提供了有关层厚度和粗糙度的有用信息。 Fe2O3-X(0≤x≤1)纳米薄膜在7 kOe以上的磁场中显示出负磁阻。同时,对于交替层Fe2O3-X(0≤x≤1)/ Cr3-XO3-Y(0≤x≤2; 0≤y≤2)的混合系统,正磁阻和磁阻在低磁场下观察到磁滞和磁阻切换效应。

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