A field-emission light source with high luminance, excellent luminance uniformity, and tunable luminance characteristics with a novel lateral-gate structure is demonstrated. The lateral-gate triode structure comprises SiC nanowire emitters on a Ag cathode electrode and a pair of Ag gate electrodes placed laterally on both sides of the cathode. The simple and cost-effective screen printing technique is employed to pattern the lateral-gates and cathode structure on soda lime glass. The area coverage of the screen-printed cathode and gates on the glass substrate (area: 6 × 8 cm2) is in the range of 2.04% – 4.74% depending on the set of cathode-gate electrodes on the substrate. The lateral-gate structure with its small area coverage exhibits a two-dimensional luminance pattern with high brightness and good luminance uniformity. A maximum luminance of 10952 cd/cm2 and a luminance uniformity of >90% can be achieved with a gate voltage of 500 V and an anode voltage of 4000 V, with an anode current of 1.44 mA and current leakage to the gate from the cathode of about 10%.
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机译：对具有新颖的侧向栅极结构的具有高亮度，优异的亮度均匀性和可调节的亮度特性的场发射光源进行了说明。横向栅三极管结构包括在Ag阴极电极上的SiC纳米线发射极和在阴极的两侧横向放置的一对Ag栅电极。采用简单且经济高效的丝网印刷技术在钠钙玻璃上对侧向浇口和阴极结构进行构图。丝网印刷的阴极和玻璃基板上的栅极的面积覆盖率（面积：6（×8 cm 2 ）在2.04％– 4.74％的范围内，具体取决于阴极栅电极的设置在基材上。具有较小面积覆盖的横向栅结构呈现出具有高亮度和良好亮度均匀性的二维亮度图案。栅极电压为500 V，阳极电压为4000 V，阳极电流为1.44 mA，阳极电压为1.44 mA，最大亮度为10952 cd / cm 2 ，亮度均匀度> 90％。从阴极到栅极的电流泄漏约为10％。
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