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Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films

机译:稀土掺杂拓扑绝缘体薄膜中的氧化效应

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摘要

The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi3+ in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state.
机译:打破拓扑绝缘体中的时间反转对称性(TRS)是解锁其奇异特性和观察量子异常霍尔效应(QAHE)的先决条件。掺入具有磁性长程有序的掺杂剂是打破TRS的最有希望的方法。预测的QAHE系统是REBiTe3,其中50%的Bi被RE原子取代(RE == Gd,Dy和Ho)。尽管RE在块状晶体中的溶解度很低,但已证明了高掺杂的薄膜,该薄膜不含次级相且具有较高的晶体质量。在这里,我们使用X射线吸收光谱研究掺杂稀土的Bi2(Se,Te)3薄膜暴露于大气中的影响。我们证明这些稀土掺杂物都是三价的,并有效地替代了Bi2(Se,Te)3矩阵中的Bi 3 + 。我们发现掺杂最严重的样品具有出乎意料的高样品氧化度,这不仅限于薄膜表面。在低掺杂极限下,稀土掺杂的膜大部分显示出表面氧化,这可以通过表面钝化,包封或原位切割来恢复拓扑表面状态来防止。

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