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Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films

机译:稀土掺杂拓扑绝缘体薄膜的氧化作用

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The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE?=?Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se,?Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi(3+) in the Bi2(Se,?Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state.
机译:拓扑绝缘体中断时间反转对称(TRS)是解锁其异国特性和观察量子异常霍尔效应(QAHE)的先决条件。展示磁性远程顺序的掺杂剂的掺入是Trs-Breaking最有希望的方法。 Rebite3,其中50%的BI替代由RE原子替换(RE?=?GD,DY和HO),是一个预测的QAHE系统。尽管RES的溶解度低,但是少量块状晶体的溶解度,已经证明了高掺杂的薄膜,其不含二次相和高结晶品质。在这里,我们使用X射线吸收光谱研究暴露于稀土掺杂Bi2(SE,ΔT)3薄膜的气氛的影响。我们证明,这些重新掺杂剂是所有三价,有效地替代BI2(SE,ΔT)3基质中的Bi(3+)。我们发现最掺杂的样品的意外高度的样品氧化,这不限于薄膜的表面。在低掺杂极限中,重新掺杂的薄膜主要显示出表面氧化,这可以通过表面钝化,包封或原位切割来防止以回收拓扑表面状态。

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