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Investigation and Manipulation of Different Analog Behaviors of Memristor as Electronic Synapse for Neuromorphic Applications

机译:忆阻器作为神经形态应用的电子突触的不同模拟行为的研究和操纵

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摘要

Low-power and high-density electronic synapse is an important building block of brain-inspired systems. The recent advancement in memristor has provided an opportunity to advance electronic synapse design. However, a guideline on designing and manipulating the memristor’s analog behaviors is still lacking. In this work, we reveal that compliance current (Icomp) of electroforming process played an important role in realizing a stable analog behavior, which is attributed to the generation of conical-type conductive filament. A proper Icomp could result in a large conductance window, good stability, and low voltage analog switching. We further reveal that different pulse conditions can lead to three analog behaviors, where the conductance changes in monotonic increase, plateau after initial jump, and impulse-like shape, respectively. These behaviors could benefit the design of electronic synapse with enriched learning capabilities. This work will provide a useful guideline for designing and manipulating memristor as electronic synapses for brain-inspired systems.
机译:低功率和高密度电子突触是大脑灵感系统的重要组成部分。忆阻器的最新发展为推进电子突触设计提供了机会。但是,仍然缺乏设计和操作忆阻器模拟行为的指南。在这项工作中,我们揭示了电铸过程的顺应电流(Icomp)在实现稳定的模拟行为中起着重要作用,这归因于锥形导电丝的产生。适当的Icomp可能会导致较大的电导窗口,良好的稳定性以及低压模拟开关。我们进一步揭示出,不同的脉冲条件可以导致三种模拟行为,其中电导率以单调增加,初始跃迁后达到平稳和脉冲状形状变化。这些行为可能有益于具有丰富学习功能的电子突触的设计。这项工作将为设计和操纵忆阻器作为大脑灵感系统的电子突触提供有用的指导。

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