Memristor circuit, memristor control system, analog product-sum operator, and neuromorphic device

摘要

A memristor circuit that can increase a maximum rate of change of a conductance of the memristor circuit while maintaining linearity and symmetry in the change in the conductance is provided. A memristor circuit includes: a first magnetoresistance effect element including a first resistance change unit configured to change a resistance value thereof based on a current flowing therein, a first electrode provided at a first end of the first resistance change unit, and a second electrode provided at a second end of the first resistance change unit; and a first field effect transistor including a gate electrode, the gate electrode being connected to a transmission path between the first electrode connected to a power supply and the power supply.