With the insight of memristor researsh growing continuously,many semiconductor material has been manufactured to various kinds of memristive device.Yet the stabilization of memristive performance haven’t been fulfilled,the fathom of memristive-acting mechanism still not being generalized.To put a futher move on low-consuming and high-stable memristive conductance device,we built a high stable double-pair-electrode device,based on the fabrication of TiO_(2-x),which has been generally applied as a n-type semiconductor.Under the constant-repeating cyclic voltammerty;we nailed the memristive quality of our mental/semiconductor thin film device.Moreover,through multifarious analytical processes based on our doping,filming growing path,we build a rational model for our memristor‘s memristive conductance mechanism,which indicated the carrier motion and electron tunnel following the biasing voltage.Our work exhibited a new type of TiO_(2-x)-based memristor,and emerged a new way to explicate the single-stage-switching memristive feature,which might initiate a new guiding ideology in semiconductor memristor’s studying.
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