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The dramatic enhancement of ferromagnetism and band gap in Fe-doped In2O3 nanodot arrays

机译:掺铁的In2O3纳米点阵列中铁磁性和带隙的显着增强

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摘要

Ordered Fe-doped In2O3 nanodot arrays with diameters between 35 nm and 80 nm are fabricated using pulsed laser deposition with the aid of ultrathin porous anodized aluminumoxide templates. The 5 at.% Fe doped In2O3 nanodot arrays are shown to consist of the cubic bixbyite structure of In2O3. The nanodot arrays are demonstrated to be doped by Fe ions with mixed valences of +2 and +3, ruling out the presence of cluster and secondary phase related to Fe. The nanodot arrays exhibit the ferromagnetism at room temperature, where the magnetic moment increases as the dot size is reduced, rising to a maximum of about 230 emu/cm3 (equivalent to an average moment on the Fe ions of 15.30 µB/Fe). This indicates an effect due to the surface of the nanodot arrays. The optical band width is also increased to 4.55 eV for the smallest dot array, thus indicating that the surface states are responsible for the magnetism and also enhance the band gap due to Burstein-Moss effect. Our results will be benefit for understanding the physical properties of oxide semiconductor nanostructures in the application of nano-spintronics devices.
机译:借助超薄多孔阳极氧化氧化铝模板,利用脉冲激光沉积技术,制备了直径介于35μnm至80μnm之间的有序掺杂Fe的In2O3纳米点阵列。掺杂了5at。%Fe的In2O3纳米点阵列由In2O3的立方方铁矿结构组成。纳米点阵列被证明由Fe离子掺杂,混合价为+2和+3,排除了与铁有关的簇和第二相的存在。纳米点阵列在室温下表现出铁磁性,其中磁矩随着点尺寸的减小而增加,最大增加到约230 emu / cm 3 (相当于Fe离子的平均矩) 15.30 µB / Fe)。这表明归因于纳米点阵列的表面的影响。对于最小的点阵列,光学带宽也增加到4.55 eV,因此表明表面状态是磁性的原因,并且由于Burstein-Moss效应而增加了带隙。我们的结果将有助于理解纳米自旋电子器件在应用中的氧化物半导体纳米结构的物理性质。

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