首页> 外国专利> Method for preparing silica nanodot arrays derived from polystyrene-block-polycarbosilane diblock copolymers by titanium oxide catalysis and silica nanodot arrays prepared accordingly

Method for preparing silica nanodot arrays derived from polystyrene-block-polycarbosilane diblock copolymers by titanium oxide catalysis and silica nanodot arrays prepared accordingly

机译:通过氧化钛催化制备由聚苯乙烯-嵌段-聚碳硅烷二嵌段共聚物衍生的二氧化硅纳米点阵列的方法和由此制备的二氧化硅纳米点阵列

摘要

PURPOSE: A method for manufacturing a silica nanodot array is provided to form an inorganic nano structure with various forms used in the manufacture of a nano-sized device on a substrate. CONSTITUTION: A method for manufacturing a silica nanodot(5) array comprises the steps of: preparing a PS_x-b-PCS_z toluene solution by dissolving a PS_x-b-PCS_z double block copolymer in toluene; forming a titanium oxide substrate(2) by spin coating a titanium dioxide sol-gel solution on a silicon wafer; forming a PSx-b-PCSz thin film(1) having a nanohole structure by spin coating the PS_x-b-PCS_z toluene solution on the titanium oxide substrate; annealing the PSx-b-PCSz thin film by exposing the thin film to an acetone steam to dry the PSx-b-PCSz thin film; and irradiating ultraviolet rays on the surface of the dried PSx-b-PCSz thin film.
机译:目的:提供一种用于制造二氧化硅纳米点阵列的方法,以形成具有在基板上制造纳米尺寸器件的各种形式的无机纳米结构。组成:一种制造二氧化硅纳米点(5)阵列的方法,包括以下步骤:通过将PS_x-b-PCS_z双嵌段共聚物溶解在甲苯中制备PS_x-b-PCS_z甲苯溶液;通过在硅晶片上旋涂二氧化钛溶胶-凝胶溶液形成二氧化钛衬底(2);通过在氧化钛基板上旋涂PS_x-b-PCS_z甲苯溶液,形成具有纳米孔结构的PSx-b-PCSz薄膜(1);通过将薄膜暴露于丙酮蒸汽中以使PSx-b-PCSz薄膜干燥以对PSx-b-PCSz薄膜进行退火;在干燥的PSx-b-PCSz薄膜的表面上照射紫外线。

著录项

  • 公开/公告号KR100983356B1

    专利类型

  • 公开/公告日2010-09-24

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20080097043

  • 发明设计人 김동하;

    申请日2008-10-02

  • 分类号C08F299/08;C08F212/08;B82B3;

  • 国家 KR

  • 入库时间 2022-08-21 18:30:47

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号