首页> 外国专利> METHOD OF MANUFACTURING L10-ORDERED FEPT NANODOT ARRAY, L10-ORDERED FEPT NANODOT ARRAY MANUFACTURED BY USING THE SAME AND HIGH DENSITY MAGNETIC RECORDING MEDIUM USING L10-ORDERED FEPT NANODOT ARRAY

METHOD OF MANUFACTURING L10-ORDERED FEPT NANODOT ARRAY, L10-ORDERED FEPT NANODOT ARRAY MANUFACTURED BY USING THE SAME AND HIGH DENSITY MAGNETIC RECORDING MEDIUM USING L10-ORDERED FEPT NANODOT ARRAY

机译:制造L10等级的Feed Nanodot阵列的方法,L10等级的Fept nanodot阵列的制造方法,该方法是使用L10等级的Fept nanodot阵列使用相同且高密度的磁记录介质制造的

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing an L10-ordered FePt nanodot array.;SOLUTION: The method of manufacturing the L10-ordered FePt nanodot array includes: a first step of depositing an FePt thin film on a substrate; a second step of forming a thin film made of a polymer material on the FePt thin film deposited in the first step; a third step of bringing a mold into contact with the FePt thin film; a fourth step of annealing the mold and a polymer pattern; a fifth step of cooling and separating the mold and the polymer pattern which are annealed; a sixth step of controlling a size of the polymer pattern through reactive ion etching; a seventh step of ion milling a portion of the FePt thin film uncovered with the polymer pattern thus forming FePt nanodots and then removing a remaining polymer layer; and an eighth step of annealing the FePt nanodot array.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种制造L10有序的FePt纳米点阵列的方法。解决方案:制造L10有序的FePt纳米点阵列的方法包括:在基底上沉积FePt薄膜的第一步;第二步骤是在第一步骤中沉积的FePt薄膜上形成由聚合物材料制成的薄膜。第三步,使模具与FePt薄膜接触;第四步,使模具和聚合物图案退火;第五步骤,冷却并分离退火的模具和聚合物图案;第六步骤,通过反应性离子蚀刻控制聚合物图案的尺寸;第七步骤,离子研磨未覆盖有聚合物图案的部分FePt薄膜,从而形成FePt纳米点,然后去除剩余的聚合物层; ;以及对FePt纳米点阵列进行退火的第八步。;版权所有:(C)2010,JPO&INPIT

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号