首页> 外国专利> L10-ordered FePt nanodot array, method of manufacturing the same and high density magnetic recording medium using the same

L10-ordered FePt nanodot array, method of manufacturing the same and high density magnetic recording medium using the same

机译:L10序的FePt纳米点阵列,其制造方法以及使用该阵列的高密度磁记录介质

摘要

This invention relates to a L10-ordered FePt nanodot array which is manufactured using capillary force lithography, to a method of manufacturing the L10-ordered FePt nanodot array and to a high density magnetic recording medium using the L10-ordered FePt nanodot array. This method includes depositing a FePt thin film on a MgO substrate, forming a thin film made of a polymer material on the deposited FePt thin film using spin coating, bringing a mold into contact with the spin coated FePt thin film, annealing the mold and a polymer pattern which are in contact with each other, cooling and separating the mold and the polymer pattern which are annealed, controlling a size of the polymer pattern through reactive ion etching, ion milling a portion of the FePt thin film uncovered with the polymer pattern thus forming a FePt nanodot array and then removing a remaining polymer layer, and annealing the FePt nanodot array.
机译:本发明涉及一种使用毛细管力光刻法制造的L10有序的FePt纳米点阵列,制造该L10有序的FePt纳米点阵列的方法以及使用该L10有序的FePt纳米点阵列的高密度磁记录介质。该方法包括在MgO衬底上沉积FePt薄膜,使用旋涂法在沉积的FePt薄膜上形成由聚合物材料制成的薄膜,使模具与旋涂的FePt薄膜接触,对模具进行退火和退火。彼此接触的聚合物图案,冷却并分离退火的模具和聚合物图案,通过反应性离子蚀刻控制聚合物图案的尺寸,对未覆盖有聚合物图案的部分FePt薄膜进行离子研磨,从而进行离子铣削形成FePt纳米点阵列,然后去除剩余的聚合物层,并对FePt纳米点阵列进行退火。

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