Rapid Oxidation of the Hole Transport Layer in Perovskite Solar Cells by A Low-Temperature Plasma

摘要

Herein we report a strategy of rapid oxidation of the hole transport layer (HTL) in perovskite solar cells by using oxygen/argon mixture plasma. This strategy offers a promising approach for simple manufacturing, mass production, and industrial applications. Compared to the conventional process of overnight oxidation, only ~10 s of oxygen/argon mixture plasma treatment is enough for the solar cell devices with FTO/ETL/perovskite/HTL/Au structure demonstrating a high power conversion efficiency. It is found that the high concentration of atomic oxygen generated in plasma oxidizing the HTL improves the conductivity and mobility, and therefore the process time is considerably shortened. This novel approach is compatible with continuous mass production, and it is suitable for the fabrication of large-area perovskite solar cells in the future.