Analysis of Optimum Copper Oxide Hole Transporting Layer for Perovskite Solar Cells

摘要

In this paper, numerical simulation of a lead halide perovskite-based solar cell with ultrathin Cu₂O (Copper oxide) as inorganic hole transporting material is investigated. The proposed thickness and properties of Cu₂O layer must be precisely tuned in order to achieve the optimal cell characteristics. The influences of effective density of states, hole mobility of hole transporting layer, thickness of perovskite absorber and P-type Cu₂O layer are considered in details. Improvements in efficiency are achieved by changing the Cu₂O and absorber layer thickness. Based on the best possible optimization, power conversion efficiency exceeding 13% is obtained. Simulated values after optimization are described in detail, lead to have a better insight of design, referred to experimental works for achieving high-efficiency solar cells.