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Clarifying photoluminescence decay dynamics of self-assembled quantum dots

机译:阐明自组装量子点的光致发光衰减动力学

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摘要

We studied the temperature-dependent photoluminescence (PL) and time-resolved PL spectra of multilayer CdTe/ZnTe quantum dots (QDs) to understand their carrier dynamics. We demonstrated a method of enhancing the confinement of carriers in CdTe QDs by modulating the number of stacked layers, leading to enhanced acoustic phonons up to 67 μeV and reducing the optical phonon coupling to 20 meV with an average phonon energy of 20 meV. The temperature-dependent decay time could be explained using a simple model of the thermal redistribution of carrier states. Thermal escape from hole states during multiphonon scattering occurred only at high temperatures, whereas blue shifts and enhanced PL intensity were expected to enhance the electron–phonon coupling and confinement-induced mixing among discrete state and continuum states with separation energies of 3.5–7.4 meV. Time-resolved PL measurements probed the electric field screening effect as a function of the strain distribution in QDs and was established to be 2.5 ± 0.2 MV/cm.
机译:我们研究了多层CdTe / ZnTe量子点(QD)的温度依赖性光致发光(PL)和时间分辨PL光谱,以了解其载流子动力学。我们展示了一种通过调制堆叠层数来增强CdTe QD中载流子限制的方法,从而使声子增强到67μeV,光子声子耦合降低到20μmeV,平均声子能量为20μmeV。可以使用载流子状态的热重新分布的简单模型来解释与温度相关的衰减时间。在多声子散射过程中,空穴状态的热逸出仅在高温下发生,而蓝移和增强的PL强度有望增强电子-声子的耦合,并限制分离态和连续态在3.5-7.4 meV的连续态之间的局限混合。时间分辨的PL测量探查了电场屏蔽效应与QDs中应变分布的函数关系,并确定为2.5±±0.2 MV / cm。

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